On top of it, power management techniques like voltage scaling, dual V TH , further magnify the variation-induced reliability issues. On the other hand, conventional resiliency techniques like transistor upsizing and supply voltage boosting typically increase the power consumption.
Collection Book Low-Power Variation-Tolerant Design in Nanometer Silicon
Low-power dissipation and process variation tolerance therefore impose contradictory design requirements. Such issues are expected to further worsen with technology scaling. To circumvent these non-idealities in process parameters, we describe two approaches: 1 variation-tolerant circuit designs and 2 circuits that can adapt themselves to operate correctly under the presence of such inconsistencies. In this chapter, we first analyze the effect of process variations and time-dependent degradation mechanisms on logic circuits.
We consider both die-to-die and within-die variation effects.
Reconfiguration Computing Systems Lab
Next, we provide an overview of variation-tolerant logic design approaches. Interestingly, these resiliency techniques transcend several design abstraction levels - however in this chapter, we focus on circuit level techniques to perform reliable computations in an unreliable environment. Effect of variations and variation tolerance in logic circuits. N2 - Variations in process parameters affect the operation of integrated circuits ICs and pose a significant threat to the continued scaling of transistor dimensions.
On top of it, power management techniques like voltage scaling, dual V TH, further magnify the variation-induced reliability issues.
This research explores a novel assignment approach that assigns tasks adaptively based on measured transistor characteristics. The fastest transistors are assigned where they most accelerate performance, while the slower transistors can still be used for less time-critical tasks.
- Related titles?
- Life Beyond Money.
- If You Cant Calm the Waters Learn to Ride the Waves ENLARGED PRINT.
- Sexual Athletes I: Two Hot Lesbian Sports Stories (MILES HIGHER and WOKEN BY HER IDOL).
- Nanometer Variation-Tolerant SRAM.
Assignments are further re-evaluated during system operation, allowing fresh transistors to replace transistors that wear out. Practically, this means IC manufacturers can produce smaller transistors and continue to deliver more capable electronics e. These capabilities continue to improve our quality of life, providing richer media, better communication, greater automation, and greater safety.
This work will reduce the energy per computational task thereby extending battery life, reducing energy bills, and facilitating cooler operation. Replacement and reassignment mean electronic components will last longer and degrade gracefully.
Download Low Power Variation Tolerant Design In Nanometer Silicon
Some full text articles may not yet be available without a charge during the embargo administrative interval. Some links on this page may take you to non-federal websites.
Their policies may differ from this site. DeHon, A; Gojman, B.
- Low-Power Variation-Tolerant Design in Nanometer Silicon - Google книги;
- Nanometer Variation-Tolerant SRAM - Mohamed Abu-Rahma - böcker () | Adlibris Bokhandel;
- Effect of Variations and Variation Tolerance in Logic Circuits | xuxixutiqevy.gq;
In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power.
This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies.